TOKYO--(BUSINESS WIRE)--Jan 27, 2026--
Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling new Universal Flash Storage 1 (UFS) Ver. 4.1 embedded memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology. Designed for read-intensive applications and high-capacity storage needs, the new devices are powered by Kioxia’s 8 th generation BiCS FLASH TM 3D flash memory technology.
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QLC UFS offers a higher bit density than traditional TLC UFS, making it suitable for mobile applications that require higher storage capacities. Advancements in controller technology and error correction have enabled QLC technology to achieve this while maintaining competitive performance.
Building on these advancements, the new Kioxia devices achieve substantial performance increases 2. Kioxia’s QLC UFS boosts sequential write speeds by 25%, random read speeds by 90%, and random write speeds by 95% compared to the previous generation (UFS 4.0 / BiCS FLASH™6 QLC UFS) 3. Write Amplification Factor (WAF) is also improved by max. 3.5× (with WriteBooster disabled).
Well-suited for smartphones and tablets, Kioxia QLC UFS also supports emerging product categories that demand higher capacity and performance, including PCs, networking, AR/VR, IoT, and AI-enabled devices.
Available in 512-gigabyte (GB) and 1-terabyte (TB) capacities, the new UFS 4.1 devices combine Kioxia’s advanced BiCS FLASH™ 3D flash memory and an integrated controller in a JEDEC-standard package. Kioxia’s 8th generation BiCS FLASH™ 3D flash memory introduces CMOS directly Bonded to Array (CBA) technology - an architectural innovation that marks a step-change in flash memory design.
Key features include:
Related Link:
Kioxia’s UFS 4.1 Product Page
- In every mention of a Kioxia product: Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications. The definition of 1KB = 2^10 bytes = 1,024 bytes. The definition of 1Gb = 2^30 bits = 1,073,741,824 bits. The definition of 1GB = 2^30 bytes = 1,073,741,824 bytes. 1Tb = 2^40 bits = 1,099,511,627,776 bits.
- 1 Gbps is calculated as 1,000,000,000 bits/s. Read and write speeds are the best values obtained in a specific test environment at Kioxia and Kioxia warrants neither read nor write speeds in individual devices. Read and write speed may vary depending on device used and file size read or written.
- Company names, product names and service names may be trademarks of third-party companies.
About Kioxia
Kioxia is a world leader in memory solutions, dedicated to the development, production and sale of flash memory and solid-state drives (SSDs). In April 2017, its predecessor Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Kioxia is committed to uplifting the world with “memory” by offering products, services and systems that create choice for customers and memory-based value for society. Kioxia's innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, automotive systems, data centers and generative AI systems.
*Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.
QLC UFS 4.1 Embedded Flash Memory Devices
