WILMINGTON, Mass.--(BUSINESS WIRE)--Oct 12, 2026--
Onto Innovation Inc. (NYSE: ONTO) announced today it received the Best Partner Award for technology achievement from SK hynix during the leading memory manufacturer’s 25 th Anniversary Partners Day on September 28, 2026. SK hynix bestowed the honor on Onto, the only company recognized for technology achievement, for developing a defect prevention system with breakthrough measurement technology for high-bandwidth memory (HBM) applications. The award highlights Onto’s contribution to SK hynix's HBM roadmap at a time when advanced memory is central to expanding AI infrastructure.
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“We are proud to be recognized by SK hynix and grateful for the trust they have placed in Onto Innovation. This award is the result of close collaboration between SK hynix and our product and customer success teams to deliver innovations that help identify hidden yield impacting defects critical to reliable HBM manufacturing,” said Mike Plisinski, chief executive officer of Onto Innovation. “HBM presents rapidly evolving application challenges. The inherent flexibility of the Dragonfly ® system enables customers to consistently overcome those challenges—generation after generation.”
Currently, memory suppliers are focused on expanding HBM capacity in order to meet AI-driven demand which, according to TrendForce is expected to swell by greater than 50% by 2027, while rapidly introducing new generations of HBM technology. The move toward 12- and 16-high HBM stacks results in thinner dies and increasingly complex assembly flows, raising the risk of hidden cracks and sub-surface defects during thinning, bonding and assembly. As each HBM generation thins the die, adds more die per stack, and packs in more connections at smaller bump sizes, inspection intensity grows—and with more value concentrated in every device, the cost of finding defects late in production rises accordingly. Onto's Dragonfly G5 inspection system provides the process control insight needed to identify critical defects earlier, helping SK hynix reduce the risk of yield loss in high-value HBM devices.
Partners Day is an annual recognition ceremony of the SK hynix Co-Growth Council, honoring supplier contributions to the company’s technology and business goals. Ryan Hwang, regional general manager of Onto Innovation Korea, accepted the award from SK hynix CEO Noh-Jung Kwak.
To learn more about Onto Innovation’s HBM process control solutions, contact your local sales representative or visit ontoinnovation.com.
About Onto Innovation Inc.
Onto Innovation is a leader in process control, combining global scale with an expanded portfolio of leading-edge technologies that includes un-patterned wafer quality, 3D metrology spanning chip features from nanometer scale transistors to large die interconnects, macro defect inspection of wafers and packages, metal interconnect composition, factory analytics, and lithography for advanced semiconductor packaging.
Our breadth of offerings across the entire semiconductor value chain combined with our connected thinking approach results in a unique perspective to help solve our customers’ most difficult yield, device performance, quality, and reliability issues. Onto Innovation strives to optimize customers’ critical path of progress by making them smarter, faster and more efficient. Headquartered in Wilmington, Massachusetts, Onto Innovation supports customers with a worldwide sales and service organization.
Additional information can be found at www.ontoinnovation.com.
Forward Looking Statements
This press release contains forward-looking statements within the meaning of the Private Securities Litigation Reform Act of 1995 (the “Act”), including Onto Innovation’s belief regarding expanding needs for process control technologies, as well as other matters that are not purely historical data. Onto Innovation wishes to take advantage of the “safe harbor” provided for by the Act and cautions that actual results may differ materially from those projected as a result of various factors, including risks and uncertainties, many of which are beyond Onto Innovation’s control. Such factors include, but are not limited to, the Company’s ability to leverage its resources to improve its position in its core markets; its ability to weather difficult economic environments; its ability to open new market opportunities and target high-margin markets; the strength/weakness of the back-end and/or front-end semiconductor market segments; the Company’s ability to effectively manage its supply chain and adequately source components from suppliers to meet customer demand; its ability to adequately protect its intellectual property rights and maintain data security; its ability to effectively maneuver global trade issues and changes in trade and export license policies; the Company’s ability to maintain relationships with its customers and manage appropriate levels of inventory to meet customer demands; the Company’s ability to realize the anticipated benefits of the proposed investment in and strategic partnership with Rigaku; the Company’s timing and ability to repay its debt; and the Company’s ability to successfully integrate acquired businesses and technologies. Additional information and considerations regarding the risks faced by Onto Innovation are available in Onto Innovation’s Form 10-K report for the year ended January 3, 2026, and subsequent filings with the Securities and Exchange Commission. As the forward-looking statements are based on Onto Innovation’s current expectations, the Company cannot guarantee any related future results, levels of activity, performance or achievements. Onto Innovation does not assume any obligation to update the forward-looking information contained in this press release, except as required by law.
Source: Onto Innovation Inc.
ONTO-IC
Onto Innovation receives the Best Partner Award for technology achievement from SK hynix. Ryan Hwang, regional general manager of Onto Innovation Korea, accepts the award from SK hynix CEO Noh-Jung Kwak during the 25th Anniversary Partners Day on September 28, 2026.
